| PART |
Description |
Maker |
| RJK6002DJE-00Z0 RJK6002DJE-15 |
600V - 2A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6032DPH-E0 RJK6032DPH-E0T2 |
600V - 3A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FGW50N60H |
Discrete IGBT (High-Speed V series) 600V / 50A
|
Fuji Electric
|
| RJK6036DP3-A0 RJK6036DP3-A0J2 RJK6036DP3-A0-15 |
600V - 2A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJP60F5DPM-15 |
600V - 40A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJQ6022DPM |
600V - 10A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJP60F5DPK-15 |
600V - 40A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJP60F7DPK RJP60F7DPK-00T0 |
600V - 50A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S5DPP-E0-T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S3DPD-00J2 |
600V - 12A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SA1413-Z |
High Voltage: VCEO=-600V High speed:tr 1.0ìs Collector to Base Voltage VCBO -600 V
|
TY Semiconductor Co., Ltd
|
